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| 2SC5758 Silicon NPN Epitaxial VHF / UHF Wide band amplifier ADE-208-1397D(Z) Rev.4 Jul. 2001 Features * Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is "WF-". 2SC5758 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 10 3.5 1.5 80 80 150 -50 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob fT PG NF Min 10 80 0.65 6 10 Typ 100 0.95 8 13 1.0 Max 600 200 100 130 1.25 2.0 Unit V nA nA nA V pF GHz dB dB Test conditions IC = 10 A, IE = 0 VCB = 10 V, IE = 0 VCE = 3.5 V, RBE = Infinite VEB = 1.5 V, IC = 0 VCB = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 900 MHz VCE = 1 V, IC = 5 mA, f = 900 MHz Rev.4, Jul. 2001, page 2 of 10 2SC5758 Collector Power Dissipation Curve 100 Pc (mW) Typical Output Characteristics 50 500 A 450 A 400 A 350 A IC (mA) 80 40 300 250 A A Collector Power Dissipation 60 30 Collector Current A 200 40 20 150 A 100 A 20 10 IB = 50 A 0 50 100 150 Ta (C) 200 0 0.5 1 1.5 2 2.5 3 VCE (V) 3.5 Ambient Temperature Collector to Emitter Voltage Typical Transfer Characteristics 50 VCE = 1 V IC (mA) hFE DC Current Transfer Ratio vs. Collector Current 200 VCE = 1 V 40 30 DC Current Transfer Ratio Collector Current 100 20 10 0 1 2 5 10 20 50 100 0 0.2 0.4 0.6 0.8 VBE (V) 1 Base to Emitter Voltage Collector Current I C (mA) Rev.4, Jul. 2001, page 3 of 10 2SC5758 Collector Output Capacitance vs. Collector to Base Voltage Cob (pF) fT (GHz) Gain Bandwidth Product vs. Collector Current 20 VCE = 1 V f =2 GHz 2.0 IE = 0 f = 1 MHz 1.6 1.2 16 Collector Output Capacitance Gain Bandwidth Product 12 0.8 0.4 8 4 0 1 2 5 10 20 50 100 0 0.4 0.8 1.2 1.6 2.0 Collector to Base Voltage VCB (V) Collector Current IC (mA) S21 Parameter vs. Collector Current 20 | S21 |2 (dB) Power Gain vs. Collector Current 20 VCE = 1 V f = 900 MHz PG (dB) Power Gain VCE = 1 V f = 2 GHz 16 16 12 12 8 S21 Parameter 8 4 0 1 2 5 10 20 50 100 4 0 1 2 5 10 20 50 100 Collector Current IC (mA) Collector Current IC (mA) Rev.4, Jul. 2001, page 4 of 10 2SC5758 Noise Figure vs. Collector Current 5 VCE = 1 V f = 900 MHz NF (dB) Noise Figure 4 3 2 1 0 1 2 5 10 20 IC 50 (mA) 100 Collector Current Rev.4, Jul. 2001, page 5 of 10 2SC5758 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -1 -5 -4 180 0 150 30 1 1.5 2 S21 Parameter vs. Frequency Scale: 8 / div. 90 120 60 -150 -30 Condition: VCE = 1 V , ZO = 50 100 to 2000 MHz (100 MHz Step) ( IC = 5 mA) ( IC = 20 mA) S12 Parameter vs. Frequency Scale: 0.06 / div. 90 120 60 Condition: VCE = 1 V , ZO = 50 100 to 2000 MHz (100 MHz Step) (IC = 5 mA) (IC = 20 mA) S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -150 -30 -3 -.4 -120 -90 -60 -.6 -.8 -1.5 -2 -1 -5 -4 Condition: VCE = 1 V , ZO = 50 100 to 2000 MHz (100 MHz Step) (IC = 5 mA) (IC = 20 mA) Condition: VCE = 1 V , ZO = 50 100 to 2000 MHz (100 MHz Step) (IC = 5 mA) (IC = 20 mA) Rev.4, Jul. 2001, page 6 of 10 2SC5758 S Parameter (VCE = 1 V, IC = 5 mA, ZO = 50 ) S11 f(MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.806 0.713 0.635 0.560 0.529 0.500 0.486 0.474 0.467 0.466 0.461 0.464 0.464 0.467 0.465 0.476 0.480 0.480 0.490 0.487 ANG -31.9 -61.5 -85.3 -102.7 -117.1 -127.8 -137.2 -144.1 -151.1 -157.1 -162.4 -166.1 -169.9 -173.8 -177.2 179.9 177.4 173.4 172.0 169.3 S21 MAG 14.60 12.31 10.02 8.22 6.94 5.97 5.20 4.65 4.14 3.77 3.45 3.19 2.99 2.78 2.62 2.46 2.36 2.24 2.14 2.06 ANG 157.6 138.9 125.3 115.4 108.4 103.1 98.6 94.6 91.7 88.4 85.9 83.4 81.3 79.1 77.3 75.2 73.4 71.8 70.2 68.6 S12 MAG 0.038 0.067 0.085 0.096 0.104 0.111 0.117 0.123 0.129 0.135 0.141 0.147 0.153 0.159 0.166 0.174 0.180 0.187 0.195 0.202 ANG 72.8 59.5 51.3 47.2 45.5 44.6 44.8 45.7 46.7 47.7 48.6 49.7 51.0 51.8 53.0 53.8 54.7 55.6 56.5 57.0 S22 MAG 0.901 0.757 0.610 0.501 0.421 0.360 0.314 0.278 0.249 0.226 0.208 0.194 0.181 0.172 0.165 0.159 0.155 0.154 0.154 0.153 ANG -24.3 -44.8 -60.1 -70.9 -79.8 -87.2 -93.1 -99.7 -105.1 -110.9 -116.0 -121.4 -127.1 -131.7 -137.5 -141.6 -147.4 -152.9 -157.6 -162.5 Rev.4, Jul. 2001, page 7 of 10 2SC5758 (VCE = 1 V, IC = 20 mA, ZO =50 ) S11 f(MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.487 0.466 0.465 0.459 0.461 0.462 0.468 0.468 0.474 0.473 0.478 0.486 0.477 0.493 0.493 0.502 0.506 0.511 0.517 0.523 ANG -78.2 -120.9 -141.6 -154.5 -161.8 -168.1 -172.8 -176.5 179.1 176.8 173.5 170.7 168.8 166.3 163.6 161.7 160.8 157.7 156.4 154.5 MAG 31.25 20.22 14.16 10.81 8.74 7.34 6.30 5.56 4.93 4.46 4.07 3.75 3.51 3.26 3.07 2.88 2.74 2.62 2.49 2.40 S21 ANG 138.4 117.0 106.4 100.4 96.1 92.9 90.2 87.7 85.7 83.7 82.2 80.3 78.8 77.2 75.9 74.5 73.2 72.0 70.7 69.5 MAG 0.026 0.040 0.050 0.060 0.070 0.080 0.091 0.101 0.113 0.124 0.135 0.145 0.156 0.167 0.179 0.189 0.201 0.211 0.222 0.232 S12 ANG 64.0 57.9 58.9 61.5 63.7 65.8 67.1 68.3 69.0 69.5 69.8 70.2 70.2 70.1 70.4 70.4 70.2 69.8 69.9 69.4 MAG 0.679 0.469 0.362 0.311 0.283 0.268 0.258 0.253 0.249 0.249 0.249 0.251 0.251 0.254 0.256 0.260 0.263 0.268 0.275 0.280 S22 ANG -53.9 -87.5 -109.1 -124.4 -135.8 -145.4 -153.2 -159.6 -165.5 -170.7 -175.1 -179.3 176.9 173.5 170.4 167.6 164.8 162.1 159.6 157.1 Rev.4, Jul. 2001, page 8 of 10 2SC5758 Package Dimensions As of January, 2001 Unit: mm 0.2 1.4 0.05 1.2 0.05 0.8 0.1 0.2 0.45 0.9 0.1 0.45 0.6 MAX Hitachi Code JEDEC EIAJ Mass (reference value) (0.1) (0.1) 3-0.2 +0.1 -0.05 0.15 +0.1 -0.05 MFPAK 0.0016 g Rev.4, Jul. 2001, page 9 of 10 2SC5758 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Copyright (c) Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 4.0 Rev.4, Jul. 2001, page 10 of 10 This datasheet has been download from: www..com Datasheets for electronics components. |
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